WORKED CLOSELY WITH AUTHORS TO DEVELOP SEVERAL PROCESS OVERVIEW FIGURES FOR THIS QUANTUM PHOTONICS PAPER
“4H−SiC is a promising material platform for
quantum photonic integrated circuits due to its wide bandgap,
high refractive index, and variety of optically addressable defects,
while being compatible with CMOS fabrication processes.
However, it is currently not possible to fabricate chip-scale
photonic integrated circuits with integrated color centers due to
nonuniformity of SiC thickness arising from the SiC-on-insulator
fabrication process. We apply the concept of dopant-selective
photoelectrochemical etching to a SiC-on-insulator stack for a
highly effective total thickness variation (TTV) reduction.”
“This work represents the first successful demonstration of a TTV reduction method in SiCOI that is
compatible with color center emission, marking a significant advancement toward scalable 4H−SiC-on-insulator integrated
photonics for quantum technologies.”
Luke Quezada 